US 12,356,630 B2
Semiconductor device and method of forming the same
Fu-Chen Chang, New Taipei (TW); Kuo-Chi Tu, Hsinchu (TW); Tzu-Yu Chen, Kaohsiung (TW); and Sheng-Hung Shih, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Nov. 3, 2023, as Appl. No. 18/501,360.
Application 17/712,543 is a division of application No. 16/727,673, filed on Dec. 26, 2019, granted, now 11,296,116, issued on Apr. 5, 2022.
Application 18/501,360 is a continuation of application No. 17/712,543, filed on Apr. 4, 2022, granted, now 11,849,588.
Prior Publication US 2024/0074206 A1, Feb. 29, 2024
Int. Cl. H10B 51/30 (2023.01); G11C 11/22 (2006.01); H01L 49/02 (2006.01); H10B 51/10 (2023.01); H10B 53/00 (2023.01); H10B 53/30 (2023.01)
CPC H10B 51/30 (2023.02) [G11C 11/223 (2013.01); H01L 28/57 (2013.01); H01L 28/60 (2013.01); H10B 51/10 (2023.02); H10B 53/00 (2023.02); H10B 53/30 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a random access memory (RAM) structure over a substrate, the RAM structure comprising:
a bottom electrode layer;
a ferroelectric layer over the bottom electrode layer; and
a top electrode layer over the ferroelectric layer; and
wherein from the cross-sectional view,
a top surface of the top electrode has a recessed region, and
a bottom of the recessed region is in a position higher than a top surface of the ferroelectric layer and a top surface of the bottom electrode;
a dielectric layer over the substrate and laterally surrounding a lower portion of the RAM structure, wherein from a cross-sectional view, the bottom electrode layer of the RAM structure has a lateral portion and a first vertical portion, and the first vertical portion upwardly extends from the lateral portion to a position higher than a top surface of the dielectric layer, and the bottom electrode layer of the RAM structure non-overlaps the dielectric layer,
the ferroelectric layer wraps around three sides of the first vertical portion of the bottom electrode layer.