| CPC H10B 43/50 (2023.02) [H01L 23/535 (2013.01); H10B 43/27 (2023.02); H10B 43/40 (2023.02); H10D 1/692 (2025.01); H10D 88/00 (2025.01)] | 19 Claims |
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1. A semiconductor device comprising:
a first structure including a peripheral circuit; and
a second structure disposed on the first structure,
wherein the second structure comprises:
a stack structure including a first stack structure and a second stack structure;
separation structures passing through the first stack structure;
a memory vertical structure disposed between the separation structures and passing through the first stack structure; and
a capacitor including a first capacitor electrode and a second capacitor electrode, passing through the second stack structure, the first and second capacitor electrodes extend parallel to each other,
wherein the first stack structure comprises gate electrodes spaced apart from each other and stacked in a first direction, and interlayer insulating layers alternately stacked with the gate electrodes,
wherein the second stack structure comprises first insulating layers spaced apart from each other and stacked in the first direction, and second insulating layers alternately stacked with the first insulating layers,
wherein each of the first and second capacitor electrodes has a linear shape extending in a second direction that is perpendicular to the first direction in a plan view,
wherein the first insulating layers comprise a different material than the second insulating layers, and
wherein the second insulating layers comprise a same material as the interlayer insulating layers.
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