US 12,356,620 B2
Semiconductor device and method for manufacturing same
Junichi Kaneyama, Yokkaichi Mie (JP); Keiichi Sawa, Yokkaichi Mie (JP); and Hiroyuki Yamashita, Yokkaichi Mie (JP)
Assigned to KIOXIA CORPORATION, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Aug. 15, 2022, as Appl. No. 17/887,766.
Claims priority of application No. 2021-191334 (JP), filed on Nov. 25, 2021.
Prior Publication US 2023/0164998 A1, May 25, 2023
Int. Cl. H10B 43/27 (2023.01); H10D 64/01 (2025.01); H10D 64/68 (2025.01)
CPC H10B 43/27 (2023.02) [H10D 64/037 (2025.01); H10D 64/685 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a plurality of electrode layers separated from each other in a first direction;
a charge storage layer disposed on side surfaces of the plurality of electrode layers via a first insulating film; and
a semiconductor layer disposed on a side surface of the charge storage layer via a second insulating film, wherein
the charge storage layer includes a portion having a fluorine concentration of 5.0×1018 atoms/cm3 or less, and
a fluorine concentration at an interface between the charge storage layer and the second insulating film is 10 times or more, or 1/10 or less, that of a fluorine concentration at an interface between the charge storage layer and the first insulating film.