| CPC H10B 43/20 (2023.02) [H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10D 30/0413 (2025.01); H10D 30/69 (2025.01); H10D 64/037 (2025.01)] | 20 Claims |
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1. A semiconductor structure, comprising:
a stack structure comprising conductor layers and insulating layers stacking alternately; and
an array of semiconductor channels located in a first region of the stack structure, wherein each of the array of semiconductor channels extends through the stack structure, and wherein:
the array of semiconductor channels comprises:
semiconductor channels in a first row and adjacent to a second region of the stack structure, wherein the second region is adjacent to the first region; and
semiconductor channels in a second row further away from the second region than the semiconductor channels in the first row;
the semiconductor channels in the first row have a substantially same size and have an oval cross section, the semiconductor channels in the second row have a substantially same size and have a circular cross section;
a first semiconductor channel in the first row has a first distance L1 from a second semiconductor channel in the second row and adjacent to the first semiconductor channel;
the second semiconductor channel has a second distance L2 from a third semiconductor channel in a third row and adjacent to the second semiconductor channel;
the third semiconductor channel has a third distance L3 from a fourth semiconductor channel in a fourth row and adjacent to the third semiconductor channel;
the fourth semiconductor channel has a fourth distance L4 from a fifth semiconductor channel in a fifth row and adjacent to the fourth semiconductor channel; and
L1>L2>L3>L4.
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