| CPC H02N 1/008 (2013.01) | 20 Claims |
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1. A method of forming a comb structure comprising:
forming trench structures in a substrate extending from a topmost surface of the substrate towards a bottommost surface of the substrate;
forming a first dielectric layer over the topmost surface of the substrate, wherein the first dielectric layer covers inner surfaces of the trench structures defined by inner surfaces of the substrate;
forming a semiconductor material over the first dielectric layer;
removing upper portions of the semiconductor material to form the comb structure comprising protrusions within the trench structures;
forming a second dielectric layer over the comb structure;
performing a planarization process to remove portions of the first and/or second dielectric layers to expose the topmost surface of the substrate;
forming a third dielectric layer over the second dielectric layer and/or the topmost surface of the substrate;
patterning the third dielectric layer to remove portions of the third dielectric layer from the topmost surface of the substrate; and
removing portions of the substrate.
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