US 12,355,214 B2
Laser emitter including nanowires
Sergei V. Gronin, West Lafayette, IN (US); Geoffrey Charles Gardner, West Lafayette, IN (US); and Raymond Leonard Kallaher, West Lafayette, IN (US)
Assigned to Microsoft Technology Licensing, LLC, Redmond, WA (US)
Filed by Microsoft Technology Licensing, LLC, Redmond, WA (US)
Filed on Jun. 6, 2022, as Appl. No. 17/805,621.
Application 17/805,621 is a continuation of application No. 16/884,439, filed on May 27, 2020, granted, now 11,362,487.
Prior Publication US 2022/0311216 A1, Sep. 29, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01S 5/34 (2006.01); H01S 5/04 (2006.01); H01S 5/042 (2006.01); H01S 5/20 (2006.01); H01S 5/343 (2006.01); H01S 5/40 (2006.01)
CPC H01S 5/341 (2013.01) [H01S 5/041 (2013.01); H01S 5/042 (2013.01); H01S 5/2077 (2013.01); H01S 5/34313 (2013.01); H01S 5/4087 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A laser emitter comprising:
a substrate;
a dielectric mask layer located proximate to and above the substrate in a thickness dimension, the dielectric mask layer having three or more trenches formed therein, wherein the three or more trenches have a plurality of different respective widths of varying sizes in a width dimension that is orthogonal to the thickness dimension;
three or more nanowires, including a respective nanowire of the three or more nanowires located at least partially within each trench of the three or more trenches, each nanowire of the three or more nanowires including:
a first semiconductor layer located above the substrate in the thickness dimension,
a quantum well layer located proximate to and above the first semiconductor layer in the thickness dimension, and
a second semiconductor layer located proximate to and above the quantum well layer in the thickness dimension,
wherein respective thicknesses of the quantum well layers of the three or more nanowires vary according to a linear or non-linear function,
wherein the respective thicknesses of the quantum well layers of the three or more nanowires in the thickness dimension define a plurality of component spectral peaks at different wavelengths for the respective nanowires; and
a controller configured to control the laser emitter by selectively varying optical pumping signals transmitted to the three or more nanowires, to thereby cause the laser emitter to emit light at the plurality of component spectral peaks within a flattened emission spectrum.