US 12,355,213 B2
Quantum dot lasers and methods for making the same
John E. Bowers, Santa Barbara, CA (US); Arthur Gossard, Santa Barbara, CA (US); Daehwan Jung, Goleta, CA (US); Kunal Mukherjee, Goleta, CA (US); Justin Norman, Goleta, CA (US); and Jennifer Selvidge, Goleta, CA (US)
Assigned to THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US)
Appl. No. 17/058,012
Filed by The Regents of the University of California, Oakland, CA (US)
PCT Filed May 24, 2019, PCT No. PCT/US2019/033980
§ 371(c)(1), (2) Date Nov. 23, 2020,
PCT Pub. No. WO2019/227026, PCT Pub. Date Nov. 28, 2019.
Claims priority of provisional application 62/676,109, filed on May 24, 2018.
Prior Publication US 2021/0218230 A1, Jul. 15, 2021
Int. Cl. H01S 5/34 (2006.01); H01S 5/343 (2006.01)
CPC H01S 5/3406 (2013.01) [H01S 5/3412 (2013.01); H01S 5/34353 (2013.01); H01S 5/3436 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A quantum dot (QD) laser comprising:
a silicon substrate; and
an active region epitaxially deposited on the silicon substrate, wherein the active region is comprised of III-V type semiconductor material that results in one or more misfit dislocations located at a boundary between the silicon substrate and the III-V type semiconductor material, wherein the active region includes a plurality of barrier layers and a plurality of QD layers interposed between each of the plurality of barrier layers, wherein a net compressive strain associated with the plurality of QD layers is maintained below a maximum allowable strain to prevent formation of misfit dislocations within the active region of the QD laser, wherein each barrier layer provides a net tensile strain that offsets the net compressive strain associated with the plurality of QD layers to maintain the net strain below the maximum allowable strain to prevent formation of misfit dislocations within the active region of the QD laser.