US 12,355,212 B2
Semiconductor lasers and processes for the planarization of semiconductor lasers
Ali Badar Alamin Dow, Ithaca, NY (US); Jason Daniel Bowker, Dryden, NY (US); and Malcolm R. Green, Lansing, OH (US)
Assigned to MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC., Lowell, MA (US)
Filed by MACOM Technology Solutions Holdings, Inc., Lowell, MA (US)
Filed on Feb. 24, 2023, as Appl. No. 18/174,250.
Application 18/174,250 is a continuation of application No. 16/678,535, filed on Nov. 8, 2019, granted, now 11,605,933.
Application 16/678,535 is a continuation of application No. 15/600,483, filed on May 19, 2017, abandoned.
Claims priority of provisional application 62/339,581, filed on May 20, 2016.
Prior Publication US 2023/0246421 A1, Aug. 3, 2023
Int. Cl. H01S 5/22 (2006.01); C23C 14/30 (2006.01); H01L 21/3105 (2006.01); H01L 21/67 (2006.01); H01L 21/68 (2006.01); H01S 5/00 (2006.01); H01S 5/02 (2006.01); H01S 5/024 (2006.01); H01S 5/028 (2006.01); H01S 5/042 (2006.01); H01S 5/10 (2021.01); H01S 5/223 (2006.01); H01S 5/343 (2006.01)
CPC H01S 5/2231 (2013.01) [C23C 14/30 (2013.01); H01L 21/31051 (2013.01); H01L 21/67098 (2013.01); H01L 21/68 (2013.01); H01S 5/0021 (2013.01); H01S 5/0202 (2013.01); H01S 5/0203 (2013.01); H01S 5/02461 (2013.01); H01S 5/0282 (2013.01); H01S 5/0425 (2013.01); H01S 5/1014 (2013.01); H01S 5/2202 (2013.01); H01S 5/2213 (2013.01); H01S 5/2214 (2013.01); H01S 5/343 (2013.01); H01S 5/04254 (2019.08); H01S 2301/176 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A laser structure, comprising:
a substrate;
an active region over the substrate;
a semiconductor layer over the active region, the semiconductor layer comprising a dovetail waveguide, the dovetail waveguide comprising a central top waveguide surface;
a metal layer extending over the semiconductor layer and contacting the central top waveguide surface a first air gap under the metal layer at a first side of the dovetail waveguide and a second air gap under the metal layer at a second side of the dovetail waveguide; and
an insulating layer over the semiconductor layer, under the metal layer, under the first air gap at the first side of the dovetail waveguide, and under the second air gap at the second side of the dovetail waveguide.