US 12,355,208 B2
Tunable VCSEL with strain compensated semiconductor DBR
Mark E. Kuznetsov, Lexington, MA (US)
Assigned to Excelitas Technologies Corp., Waltham, MA (US)
Filed by Excelitas Technologies Corp., Waltham, MA (US)
Filed on Oct. 14, 2021, as Appl. No. 17/450,918.
Claims priority of provisional application 63/091,412, filed on Oct. 14, 2020.
Prior Publication US 2022/0115838 A1, Apr. 14, 2022
Int. Cl. H01S 5/183 (2006.01); H01S 5/068 (2006.01); H01S 5/34 (2006.01)
CPC H01S 5/18377 (2013.01) [H01S 5/068 (2013.01); H01S 5/34 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A laser including a semiconductor distributed Bragg reflector mirror, wherein the mirror comprises:
a GaAs substrate; and
a plurality of layers disposed on the GaAs substrate, the plurality of layers comprising layers of compressive InGaAs alternating with layers of tensile AlAsP or GaAlAsP.