US 12,355,207 B1
Efficient laser system
René Todt, Wilmington, DE (US); and Riyaz Mohammed Abdul Khadar, Wilmington, DE (US)
Assigned to II-VI Delaware, Inc., Wilmington, DE (US)
Filed by II-VI Delaware, Inc., Wilmington, DE (US)
Filed on Aug. 12, 2024, as Appl. No. 18/800,495.
Int. Cl. H01S 5/10 (2021.01); H01S 5/00 (2006.01)
CPC H01S 5/1003 (2013.01) [H01S 5/0064 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A laser semiconductor system, said system comprising:
an n-side layer, an active region, a p-side waveguide layer, and a cladding layer;
a plurality of sections, comprising at least a front section at the front of said semiconductor and a rear section at the rear of said semiconductor; and
wherein a thickness of said p-side waveguide layer is monotonically increasing in each of said plurality of sections in the direction from said front section to said rear section.