	US 12,355,024 B2
	Heterogenous integration scheme for III-V/Si and Si CMOS integrated circuits
Chan-Hong Chern, Palo Alto, CA (US); and Yi-An Lai, Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Feb. 11, 2022, as Appl. No. 17/650,758.
Claims priority of provisional application 63/264,205, filed on Nov. 17, 2021.
Prior Publication US 2023/0154912 A1, May 18, 2023
Int. Cl. H01L 25/065 (2023.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01)

CPC H01L 25/50 (2013.01) [H01L 21/76898 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 25/0657 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/83047 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/1425 (2013.01)]

20 Claims

1. A method comprising:

bonding a III-V die directly to a Complementary Metal-Oxide-Semiconductor (CMOS) die through solder bonding or micro bump bonding to form a die stack, wherein the III-V die comprises:

a (111) semiconductor substrate; and

a first circuit comprising:

a III-V based n-type transistor formed at a surface of the (111) semiconductor substrate, and wherein the CMOS die comprises:

a (100) semiconductor substrate;

a second circuit comprising:

an n-type transistor on the (100) semiconductor substrate; and

a p-type transistor on the (100) semiconductor substrate, wherein the first circuit is electrically connected to the second circuit;

dispensing an underfill into a gap between the III-V die and the CMOS die;

forming a through-via in the III-V die;

polishing the (111) semiconductor substrate to reveal the through-via; and

attaching a heat sink to the III-V die through a thermal interface material, wherein the thermal interface material physically contacts the through-via.