| CPC H01L 24/96 (2013.01) [H01L 23/15 (2013.01); H01L 24/19 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/92244 (2013.01); H01L 2924/15788 (2013.01)] | 19 Claims |

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1. A wafer- or panel-level encapsulated package comprising:
a glass substrate comprising a glass cladding layer fused to a glass core layer, the glass substrate comprising a cavity, wherein the glass cladding layer has a higher etch rate in an etchant than the glass core layer;
a microelectronic component disposed in the cavity;
an encapsulant sealed to the glass substrate such that the microelectronic component is encapsulated within the cavity, the encapsulant comprising an epoxy compound; and
wherein the wafer- or panel-level encapsulated package is free of adhesives between the cavity and the microelectronic component.
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11. A method for forming a wafer- or panel-level encapsulated package, comprising:
etching a cavity into a glass substrate comprising a glass cladding layer fused to a glass core layer, wherein the glass cladding layer has a higher etch rate in an etchant than the glass core layer;
depositing a microelectronic component into the cavity;
sealing an encapsulant to the glass substrate such that the microelectronic component is encapsulated within the cavity, the encapsulant comprising an epoxy compound; and
wherein the wafer- or panel-level encapsulated package is free of adhesives between the cavity and the microelectronic component.
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