US 12,354,974 B2
Semiconductor package including photo imageable dielectric
Yuseon Heo, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 29, 2022, as Appl. No. 17/956,153.
Application 17/956,153 is a continuation of application No. 17/001,992, filed on Aug. 25, 2020, granted, now 11,462,487.
Claims priority of application No. 10-2020-0030545 (KR), filed on Mar. 12, 2020.
Prior Publication US 2023/0014900 A1, Jan. 19, 2023
Int. Cl. H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 25/10 (2006.01)
CPC H01L 23/562 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/105 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/214 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/3512 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor package, comprising:
a lower redistribution layer including a plurality of lower insulating layers, a plurality of lower redistribution patterns disposed in the plurality of lower insulating layers, and an under-bump metal (UBM) extended in an outermost lower insulating layer among the plurality of lower insulating layers and connected to an outermost lower redistribution pattern among the plurality of lower redistribution patterns;
a semiconductor chip disposed on the lower redistribution layer and electrically connected to the plurality of lower redistribution patterns;
a mold layer surrounding the semiconductor chip on the lower redistribution layer;
an upper redistribution layer disposed on the mold layer and including at least one upper redistribution pattern;
a through-mold via (TMV) penetrating the mold layer and connected to the plurality of lower redistribution patterns and the at least one upper redistribution pattern; and
a connection terminal disposed on the UBM,
wherein the outermost lower insulating layer includes a first compound that is a precursor compound and a second compound that is cyclized from the first compound, and has a first portion including the second compound relative to the first compound in a first proportion and a second portion including the second compound relative to the first compound in a second proportion less than the first proportion, and
wherein a diameter of the first portion is between 1.1 and 1.5 times a diameter of the UBM.