US 12,354,948 B2
Integrated device and integrated passive device comprising magnetic material
Kai Liu, Phoenix, AZ (US); Roy Chiu, Taichung (TW); Nosun Park, San Diego, CA (US); Je-Hsiung Lan, San Diego, CA (US); and Jonghae Kim, San Diego, CA (US)
Assigned to QUALCOMM INCORPORATED, San Diego, CA (US)
Filed by QUALCOMM Incorporated, San Diego, CA (US)
Filed on Jun. 30, 2022, as Appl. No. 17/855,492.
Prior Publication US 2024/0006308 A1, Jan. 4, 2024
Int. Cl. H01L 23/522 (2006.01); H01F 17/00 (2006.01); H01L 23/498 (2006.01); H10D 1/20 (2025.01)
CPC H01L 23/5227 (2013.01) [H01F 17/0013 (2013.01); H01L 23/49827 (2013.01); H01L 23/5226 (2013.01); H10D 1/20 (2025.01); H01F 2017/002 (2013.01); H01F 2017/0066 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A device comprising:
a die substrate;
a plurality of interconnects located over the die substrate, wherein the plurality of interconnects are configured to operate as an inductor and wherein the plurality of interconnects comprises a first via interconnect and a second via interconnect;
at least one dielectric layer that surrounds at least part of the plurality of interconnects, wherein the at least one dielectric layer comprises a first dielectric layer that laterally surrounds and touches the first via interconnect, and a second dielectric layer that laterally surrounds and touches the second via interconnect; and
at least one magnetic layer that surrounds the at least one dielectric layer, wherein the at least one magnetic layer laterally surrounds and touches the first dielectric layer and the second dielectric layer.