US 12,354,920 B2
Method of forming optical proximity correction model and method of fabricating semiconductor device using the same
Sang Chul Yeo, Osan-si (KR); Min-Cheol Kang, Hwaseong-si (KR); and Sooryong Lee, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 3, 2022, as Appl. No. 17/735,593.
Claims priority of application No. 10-2021-0113960 (KR), filed on Aug. 27, 2021.
Prior Publication US 2023/0062677 A1, Mar. 2, 2023
Int. Cl. H01L 21/66 (2006.01); G01N 21/88 (2006.01); G01N 21/84 (2006.01)
CPC H01L 22/24 (2013.01) [G01N 21/8851 (2013.01); H01L 22/12 (2013.01); H01L 22/26 (2013.01); G01N 2021/8461 (2013.01); G01N 2021/8883 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming an optical proximity correction (OPC) model, comprising:
obtaining a scanning electron microscope (SEM) image and a graphic data system (GDS) image, the SEM image being an average image of a plurality of images taken using one or more scanning electron microscopes and the GDS image obtained from a designed layout;
aligning the SEM image and the GDS image;
performing an image filtering process on the SEM image;
extracting a contour from the SEM image; and
verifying the contour,
wherein the verifying of the contour is performed using a genetic algorithm, and
variables in the genetic algorithm comprise first parameters related to the aligning of the SEM image and the GDS image, second parameters related to the image filtering process, and third parameters related to a critical dimension (CD) measurement process.