US 12,354,914 B2
Method for producing substrate having through-silicon vias, substrate having through-silicon vias, and copper paste for through-silicon via formation
Yoshinori Ejiri, Tokyo (JP); Hideo Nakako, Tokyo (JP); Yuki Kawana, Tokyo (JP); Motoki Yonekura, Tokyo (JP); Shinichirou Sukata, Tokyo (JP); Manabu Ishii, Tokyo (JP); Masaru Fujita, Tokyo (JP); Michiko Natori, Tokyo (JP); Masahiro Kimura, Tokyo (JP); and Ryo Honna, Tokyo (JP)
Assigned to Resonac Corporation, Tokyo (JP)
Appl. No. 17/605,138
Filed by Showa Denko Materials Co., Ltd., Tokyo (JP)
PCT Filed Apr. 24, 2019, PCT No. PCT/JP2019/017509
§ 371(c)(1), (2) Date Oct. 20, 2021,
PCT Pub. No. WO2020/217361, PCT Pub. Date Oct. 29, 2020.
Prior Publication US 2022/0230918 A1, Jul. 21, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 25/065 (2023.01)
CPC H01L 21/76898 (2013.01) [H01L 21/76883 (2013.01); H01L 23/481 (2013.01); H01L 25/0657 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method for producing a substrate having through-silicon vias, the method comprising:
a preparation step of preparing a silicon substrate including a silicon wafer provided with through-holes, the silicon substrate having the through-holes communicating with both principal surfaces;
a copper sintered body formation step of forming a copper sintered body having a porous structure such that the copper sintered body fills at least the through-holes; and then
a resin impregnation step of impregnating the copper sintered body with a curable resin composition; and then
a resin curing step of curing the curable resin composition impregnated into the copper sintered body to form an electric conductor including the copper sintered body, the copper sintered body having pores filled with a resin cured product, and providing through-silicon vias in the through-holes.