US 12,354,912 B2
Plasma-doped trenches for memory
Yiping Wang, Boise, ID (US); and Wesley O. Mckinsey, Nampa, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Sep. 22, 2022, as Appl. No. 17/950,640.
Prior Publication US 2024/0105510 A1, Mar. 28, 2024
Int. Cl. H01L 21/768 (2006.01); H01L 21/3215 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01)
CPC H01L 21/76886 (2013.01) [H01L 21/32155 (2013.01); H01L 21/76804 (2013.01); H01L 21/76805 (2013.01); H01L 21/7684 (2013.01); H01L 21/76895 (2013.01); H01L 23/53271 (2013.01); H01L 23/535 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method, comprising:
forming, above a substrate, a stack of materials comprising layers of a polysilicon material and an oxide material;
forming a trench in the stack of materials based at least in part on forming the stack of materials, wherein the trench comprises at least a first sidewall, a second sidewall, and a bottom surface; and
doping at least the first sidewall, the second sidewall, and the bottom surface of the trench, wherein the first sidewall, the second sidewall, and the bottom surface of the trench each comprise one or more of Boron, Carbon, Fluorine, Helium, or Hydrogen based at least in part on doping at least the first sidewall, the second sidewall, and the bottom surface of the trench.