US 12,354,906 B2
Method of manufacturing semiconductor device and method of forming pattern
Toshiaki Komukai, Yokkaichi (JP); and Motofumi Komori, Yokkaichi (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Sep. 8, 2022, as Appl. No. 17/930,544.
Claims priority of application No. 2022-047436 (JP), filed on Mar. 23, 2022.
Prior Publication US 2023/0307287 A1, Sep. 28, 2023
Int. Cl. H01L 21/768 (2006.01); H10B 41/50 (2023.01)
CPC H01L 21/76802 (2013.01) [H10B 41/50 (2023.02)] 12 Claims
OG exemplary drawing
 
1. A method of manufacturing semiconductor device comprising:
applying a resin on a first surface of a first layer, the first layer comprising a first hole having a first depth and a second hole having a second depth;
forming a pattern on the resin, the pattern comprising a convex part above the first hole, a diameter of the convex part being smaller than a diameter of an opening of the first hole;
forming a protecting layer exposing a part of the convex part;
removing the resin in the first hole, the resin in the first hole being connected with the convex part; and
processing the first hole to form a third hole connecting with the first hole and having a third depth in the first layer below the first hole.