US 12,354,905 B2
Gate and locos dielectrics grown using locos processing
Mark Francis Arendt, Richardson, TX (US); and Damien Thomas Gilmore, Allen, TX (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed on Jan. 28, 2022, as Appl. No. 17/588,091.
Prior Publication US 2023/0245919 A1, Aug. 3, 2023
Int. Cl. H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01)
CPC H01L 21/76221 (2013.01) [H01L 21/0217 (2013.01); H01L 21/02271 (2013.01); H01L 21/28211 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming an isolation pad oxide layer on a substrate;
forming and patterning a silicon nitride layer on the isolation pad oxide layer;
oxidizing portions of the substrate not covered by the silicon nitride layer to form a LOCOS layer;
subsequent to forming the LOCOS layer, oxidizing the silicon nitride layer in an oxidizing ambient containing a chlorine source to form a silicon dioxide layer; and
thinning the silicon dioxide layer.