US 12,354,890 B2
Stage and plasma processing apparatus
Shota Ezaki, Miyagi (JP); Katsuyuki Koizumi, Miyagi (JP); and Masanori Takahashi, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jun. 2, 2023, as Appl. No. 18/205,168.
Application 18/205,168 is a continuation of application No. 16/998,264, filed on Aug. 20, 2020, granted, now 11,784,066.
Claims priority of application No. 2019-152156 (JP), filed on Aug. 22, 2019.
Prior Publication US 2023/0317474 A1, Oct. 5, 2023
Int. Cl. H01L 21/67 (2006.01); H01L 21/683 (2006.01); H01L 21/687 (2006.01)
CPC H01L 21/67103 (2013.01) [H01L 21/67109 (2013.01); H01L 21/6833 (2013.01); H01L 21/68785 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A substrate processing apparatus comprising:
a chamber;
a substrate support disposed in the chamber, the substrate support including:
a conductive base having an upper portion and a lower portion, the upper portion being electrically connected to the lower portion, the upper portion having a flow path, an accommodation space being formed between the upper portion and the lower portion;
an electrostatic chuck disposed on the conductive base;
a plurality of heaters disposed in the electrostatic chuck; and
a heater control board disposed in the accommodation space and configured to drive the plurality of heaters; and
a fan configured to supply a fluid into the accommodation space,
wherein a heat exchange medium is supplied to the flow path from outside the chamber.