US 12,354,883 B2
Omni directional interconnect with magnetic fillers in mold matrix
Bohan Shan, Chandler, AZ (US); Dingying Xu, Chandler, AZ (US); Kristof Darmawikarta, Chandler, AZ (US); Srinivas Venkata Ramanuja Pietambaram, Chandler, AZ (US); Hongxia Feng, Chandler, AZ (US); Gang Duan, Chandler, AZ (US); Jung Kyu Han, Chandler, AZ (US); Xiaoying Guo, Chandler, AZ (US); Jeremy D. Ecton, Gilbert, AZ (US); Santosh Tripathi, Portland, OR (US); Bai Nie, Chandler, AZ (US); Haobo Chen, Chandler, AZ (US); Kyle Jordan Arrington, Gilbert, AZ (US); Yue Deng, Chandler, AZ (US); and Wei Wei, Chandler, AZ (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Sep. 24, 2021, as Appl. No. 17/484,315.
Prior Publication US 2023/0101629 A1, Mar. 30, 2023
Int. Cl. H01L 23/29 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/24 (2006.01); H01L 23/26 (2006.01); H01L 23/538 (2006.01)
CPC H01L 21/485 (2013.01) [H01L 21/565 (2013.01); H01L 23/24 (2013.01); H01L 23/26 (2013.01); H01L 23/295 (2013.01); H01L 23/5381 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor interconnect assembly comprising:
a mold layer having a first side and a second side, the mold layer comprising a mold material, a first filler material dispersed in the mold material, and a second filler material dispersed in the mold material, wherein the second filler material includes magnetic particles;
a die embedded in the mold layer;
one or more pillars extending in the mold layer from the first side to the second side; and
wherein the second filler material is more densely dispersed within the mold layer along a gradient between the first side and the second side.