US 12,354,882 B2
Semiconductor structure and method for forming the same
Po-Chao Tsao, Hsinchu (TW); and Hsien-Hsin Lin, Hsinchu (TW)
Assigned to MEDIATEK INC., Hsinchu (TW)
Filed by MEDIATEK INC., Hsinchu (TW)
Filed on Dec. 19, 2022, as Appl. No. 18/067,886.
Claims priority of provisional application 63/297,267, filed on Jan. 7, 2022.
Prior Publication US 2023/0223276 A1, Jul. 13, 2023
Int. Cl. H01L 21/48 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H10D 62/13 (2025.01)
CPC H01L 21/481 (2013.01) [H01L 21/02293 (2013.01); H01L 21/02362 (2013.01); H01L 21/045 (2013.01); H01L 21/76243 (2013.01); H01L 21/76814 (2013.01); H01L 21/76829 (2013.01); H10D 62/151 (2025.01)] 42 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
an insulator layer;
a first field-effect transistor device, a second field-effect transistor device and an isolation field-effect transistor device between the first field-effect transistor device and the second field-effect transistor device formed on the insulator layer, wherein each of the first field-effect transistor device, the second field-effect transistor device and the isolation field-effect transistor device comprises:
a fin structure formed on the insulator layer, wherein the fin structure comprises channel layers and a gate structure that is wrapped around the channel layer; and
a first epitaxial source/drain structure and a second epitaxial source/drain structure connected to opposite sides of the channel layers, wherein the isolation field-effect transistor device is kept in an off-state;
a front-side gate contact formed on the first field-effect transistor device opposite the insulator layer, wherein the front-side gate contact is electrically connected to the gate structure of the first field-effect transistor device; and
a back-side gate contact formed passing through the insulator layer and electrically connected to the gate structure of the isolation field-effect transistor device.