US 12,354,879 B2
Method of fabricating semiconductor device and method of separating substrate
Cheonil Park, Seongnam-si (KR); Wonkeun Kim, Hwaseong-si (KR); and Myoungchul Eum, Asan-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Feb. 1, 2022, as Appl. No. 17/590,717.
Claims priority of application No. 10-2021-0087670 (KR), filed on Jul. 5, 2021.
Prior Publication US 2023/0040281 A1, Feb. 9, 2023
Int. Cl. H01L 21/306 (2006.01); B32B 7/12 (2006.01); B32B 38/16 (2006.01); B32B 43/00 (2006.01); C09J 7/40 (2018.01); H01L 21/683 (2006.01)
CPC H01L 21/30625 (2013.01) [B32B 7/12 (2013.01); B32B 38/162 (2013.01); B32B 43/006 (2013.01); C09J 7/401 (2018.01); H01L 21/6836 (2013.01); B32B 2310/0831 (2013.01); B32B 2457/00 (2013.01); C09J 2203/326 (2013.01); C09J 2483/005 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating a semiconductor device, the method comprising:
providing a release layer between a carrier substrate and a first surface of a device substrate to attach the device substrate to the carrier substrate;
irradiating the carrier substrate with an ultraviolet ray to separate the carrier substrate from the release layer and to expose one surface of the release layer; and
performing a cleaning process on the one surface of the release layer to expose the first surface of the device substrate,
wherein the release layer includes an aromatic polymerization unit and a siloxane polymerization unit.
 
11. A method of separating a substrate, the method comprising:
providing a wafer support structure that includes a device substrate, a carrier substrate, and a release layer between the device substrate and the carrier substrate;
irradiating the carrier substrate with an ultraviolet ray to separate the carrier substrate from the release layer; and
using a cleansing agent to remove the release layer and to expose the device substrate,
wherein the release layer includes:
an aromatic polymerization unit that is decomposed by the ultraviolet ray; and
a siloxane polymerization unit that is decomposed by the cleansing agent.
 
16. A method of fabricating a semiconductor device, the method comprising:
providing a release layer between a carrier substrate and a first surface of a device substrate to attach the device substrate to the carrier substrate;
performing a processing process on a second surface of the device substrate to form a processed device substrate;
irradiating the carrier substrate with an ultraviolet ray to separate the carrier substrate from the release layer and the processed device substrate and to expose one surface of the release layer; and
allowing the one surface of the release layer to undergo a cleaning process to expose the first surface of the device substrate,
wherein the release layer includes:
a first polymerization unit that is decomposed by irradiation of the ultraviolet ray; and
a second polymerization unit that is decomposed by the cleaning process, the second polymerization unit being different from the first polymerization unit.