US 12,354,878 B2
Semiconductor device having semiconductor substrate including hydrogen-related donor, and manufacturing method therefor
Tomohiro Tamaki, Tokyo (JP)
Assigned to MITSUBISHI ELECTRIC CORPORATION, Tokyo (JP)
Appl. No. 17/797,109
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Mar. 13, 2020, PCT No. PCT/JP2020/010983
§ 371(c)(1), (2) Date Aug. 3, 2022,
PCT Pub. No. WO2021/181644, PCT Pub. Date Sep. 16, 2021.
Prior Publication US 2023/0111002 A1, Apr. 13, 2023
Int. Cl. H10D 62/53 (2025.01); H01L 21/30 (2006.01); H10D 12/00 (2025.01); H10D 30/66 (2025.01)
CPC H01L 21/3003 (2013.01) [H10D 62/53 (2025.01); H10D 12/441 (2025.01); H10D 30/66 (2025.01)] 3 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor substrate having a first main surface and a second main surface;
a first semiconductor region of a first conductivity type that is a drift layer formed between the first main surface and the second main surface of the semiconductor substrate;
a second semiconductor region of a second conductivity type formed between the first semiconductor region and the first main surface; and
at least a third semiconductor region of a first conductivity type formed between the first semiconductor region and the second main surface and having a higher peak concentration of impurity than the first semiconductor region, wherein
a hydrogen-related donor is included in a whole region ranging from an end portion on a side of the first main surface to an end portion on a side of the second main surface in the first semiconductor region, and
a concentration of the hydrogen-related donor of the first semiconductor region is higher than an impurity concentration of the first semiconductor region.