| CPC H01L 21/28568 (2013.01) [C23C 16/08 (2013.01); C23C 16/45553 (2013.01); H01L 21/28556 (2013.01); H01L 21/76843 (2013.01)] | 24 Claims |

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1. A process for forming a thin film comprising molybdenum and carbon on a substrate in a reaction space, the process comprising a deposition cycle comprising:
contacting the substrate with a first reactant comprising a vapor phase molybdenum precursor comprising a molybdenum halide and subsequently contacting the substrate simultaneously with a second reactant comprising CO and a third reactant comprising H2,
wherein the deposition cycle is repeated two or more times to form the thin film comprising molybdenum and carbon, wherein the thin film consists essentially of one or more of MoC, Mo2C, MOOC, MoOCN, or MoCN.
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