US 12,354,876 B2
Gate structure passivating species drive-in method and structure formed thereby
Hsiao-Kuan Wei, Longtan Township (TW); Hsien-Ming Lee, Changhua (TW); Chin-You Hsu, Hsinchu (TW); Hsin-Yun Hsu, Taoyuan (TW); and Pin-Hsuan Yeh, Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 7, 2023, as Appl. No. 18/330,885.
Application 16/203,832 is a division of application No. 15/824,474, filed on Nov. 28, 2017, granted, now 10,854,459, issued on Dec. 1, 2020.
Application 18/330,885 is a continuation of application No. 17/334,255, filed on May 28, 2021, granted, now 11,710,638.
Application 17/334,255 is a continuation of application No. 16/203,832, filed on Nov. 29, 2018, granted, now 11,024,505, issued on Jun. 1, 2021.
Claims priority of provisional application 62/564,827, filed on Sep. 28, 2017.
Prior Publication US 2023/0317457 A1, Oct. 5, 2023
Int. Cl. H01L 21/28 (2025.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/3213 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01); H10D 64/66 (2025.01); H10D 64/68 (2025.01)
CPC H01L 21/28185 (2013.01) [H01L 21/02321 (2013.01); H01L 21/28556 (2013.01); H01L 21/32134 (2013.01); H10D 64/01 (2025.01); H10D 64/667 (2025.01); H10D 64/685 (2025.01); H01L 21/28088 (2013.01); H01L 21/28097 (2013.01); H01L 21/28518 (2013.01); H01L 21/28568 (2013.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a semiconductor fin over a substrate;
a first source/drain region and a second source/drain region over the semiconductor fin;
a gate structure between the first source/drain region and the second source/drain region, the gate structure comprising:
a gate dielectric layer along sidewalls and over a top surface of the semiconductor fin, the gate dielectric layer comprising fluorine;
a capping layer over the gate dielectric layer, the capping layer comprising titanium-silicon nitride, titanium-carbon nitride, titanium-aluminum nitride, tantalum-silicon nitride, tantalum-carbon nitride, or aluminum nitride;
a barrier layer over the capping layer, the barrier layer comprising tantalum-carbon nitride, tantalum-aluminum nitride, titanium-carbon nitride, titanium-aluminum nitride, or aluminum nitride;
a first work-function tuning layer over the barrier layer, wherein the first work-function tuning layer comprises a majority of titanium-silicon nitride, titanium-carbon nitride, titanium-aluminum nitride, tantalum nitride, tantalum-silicon nitride (TaSixNy), tantalum-carbon nitride, or cobalt;
a second work-function tuning layer over the first work-function tuning layer, the second work-function tuning layer having a non-zero concentration of fluorine that is greater than a non-zero concentration of fluorine in the barrier layer, that is greater than a non-zero concentration of fluorine in the capping layer and that is greater than the non-zero concentration of fluorine in the first work-function tuning layer, wherein the second work-function tuning layer comprises titanium aluminum carbide (TiAlC), a titanium aluminum alloy, or tantalum-aluminum carbide;
a barrier/adhesion layer over the second work-function tuning layer, wherein the barrier layer has a non-zero concentration of tungsten that is higher than a non-zero concentration of tungsten within the first work-function tuning layer and is higher than a non-zero concentration of tungsten within the capping layer and is higher than a non-zero concentration of tungsten within the gate dielectric layer, the barrier-adhesion layer comprising titanium-silicon nitride, titanium-carbon nitride, titanium-aluminum nitride, tantalum-silicon nitride, or tantalum-carbon nitride; and
a metal gate electrode over the barrier layer, a concentration of fluorine in the gate dielectric layer being greater than the non-zero concentration of fluorine in the first work-function tuning layer and also being greater than the non-zero concentration of fluorine in the second work-function tuning layer.