US 12,354,872 B2
Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
Tom Blomberg, Vantaa (FI); and Chiyu Zhu, Helsinki (FI)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Apr. 28, 2023, as Appl. No. 18/140,926.
Application 18/140,926 is a division of application No. 16/713,311, filed on Dec. 13, 2019, granted, now 11,658,030.
Application 16/713,311 is a continuation of application No. 15/917,262, filed on Mar. 9, 2018, granted, now 10,529,563, issued on Jan. 7, 2020.
Claims priority of provisional application 62/478,471, filed on Mar. 29, 2017.
Prior Publication US 2023/0260784 A1, Aug. 17, 2023
Int. Cl. H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 21/28 (2025.01)
CPC H01L 21/02565 (2013.01) [C23C 16/401 (2013.01); C23C 16/407 (2013.01); C23C 16/45523 (2013.01); C23C 16/45527 (2013.01); H01L 21/0228 (2013.01); H01L 21/0257 (2013.01); H01L 21/0262 (2013.01); H01L 21/28194 (2013.01); H01L 21/02592 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method for forming a doped metal oxide film on a substrate, comprising:
contacting the substrate with a first reactant comprising a metal halide source;
contacting the substrate with a second reactant comprising a hydrogenated source, wherein the hydrogenated source is a dopant precursor for the doped metal oxide film; and
contacting the substrate with a third reactant comprising an oxide source,
wherein the doped metal oxide film comprises a structure depending on an order of the contacting the substrate with the first reactant, the contacting the substrate with the second reactant, and the contacting the substrate with the third reactant,
wherein the metal halide source comprises at least one transition metal selected from the group consisting of scandium (Sc), yttrium (Y), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), zinc (Zn), cadmium (Cd), and mercury (Hg), and
wherein the structure of the doped metal oxide film comprises a substantially amorphous structure in response to the contacting the substrate with the third reactant occurring after the contacting the substrate with the first reactant and before the contacting the substrate with the second reactant.