US 12,354,871 B2
Ultrathin atomic layer deposition film accuracy thickness control
Jun Qian, Sherwood, OR (US); Hu Kang, Tualatin, OR (US); Adrien LaVoie, Newberg, OR (US); Seiji Matsuyama, Toyama (JP); and Purushottam Kumar, Hillsboro, OR (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Filed by Lam Research Corporation, Fremont, CA (US)
Filed on Mar. 22, 2023, as Appl. No. 18/188,325.
Application 18/188,325 is a continuation of application No. 17/305,938, filed on Jul. 16, 2021, granted, now 11,646,198.
Application 17/305,938 is a continuation of application No. 16/457,635, filed on Jun. 28, 2019, granted, now 11,101,129, issued on Aug. 24, 2021.
Application 16/457,635 is a continuation of application No. 14/664,545, filed on Mar. 20, 2015, granted, now 10,566,187, issued on Feb. 18, 2020.
Prior Publication US 2023/0298884 A1, Sep. 21, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/0228 (2013.01) [C23C 16/02 (2013.01); C23C 16/401 (2013.01); C23C 16/45525 (2013.01); C23C 16/45542 (2013.01); C23C 16/45553 (2013.01); H01J 37/32449 (2013.01); H01J 37/32743 (2013.01); H01J 37/32899 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01J 37/32834 (2013.01); H01J 2237/1825 (2013.01); H01J 2237/201 (2013.01); H01J 2237/20278 (2013.01); H01J 2237/332 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of depositing a silicon-containing film on a substrate, the method comprising:
providing the substrate;
exposing the substrate to an aminosilane;
exposing the substrate to a reactant to react with the aminosilane and form at least a portion of a silicon-containing film;
alternating between exposing of the substrate to the aminosilane and the exposing of the substrate to the reactant in cycles until a desired thickness of the silicon-containing film is deposited; and
prior to exposing the substrate to the aminosilane, exposing the substrate to a soak gas containing only one or more gases used when exposing the substrate to the reactant.