US 12,354,868 B2
Cleaning method, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus
Yuma Ikeda, Toyama (JP); Kazuki Nonomura, Toyama (JP); and Kenichi Suzaki, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Dec. 27, 2022, as Appl. No. 18/089,190.
Claims priority of application No. 2022-002098 (JP), filed on Jan. 11, 2022.
Prior Publication US 2023/0223247 A1, Jul. 13, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/0206 (2013.01) [H01L 21/67017 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A cleaning method, comprising:
(a) lowering a temperature in a process chamber supplied with a cleaning gas containing a halogen element while being heated at a first temperature, from the first temperature to a second temperature, while vacuum-exhausting an inside of the process chamber; and
(b) after (a), supplying a gas containing a water vapor into the process chamber while vacuum-exhausting the inside of the process chamber, to cause the halogen element remaining in the process chamber to react with the water vapor,
wherein the act of lowering the temperature is performed after substrate processing is performed at a third temperature in the process chamber,
wherein the second temperature is equal to or lower than the third temperature, and
wherein in (a), the gas containing the water vapor is not supplied into the process chamber.