| CPC H01J 37/3476 (2013.01) [B08B 5/00 (2013.01); B08B 13/00 (2013.01); H01J 37/32862 (2013.01); H01J 37/32981 (2013.01); B08B 2205/00 (2013.01); H01J 2237/0225 (2013.01)] | 20 Claims |

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1. A system for detecting a processing chamber condition, comprising:
an ion analyzer module configured to be coupled to the processing chamber, the ion analyzer module further configured to:
receive a residual gas from the processing chamber as a result of a wafer-less processing step being performed in the processing chamber, wherein the wafer-less processing step includes:
introducing a cleaning gas containing carbon tetrafluoride gas and chlorine gas into the processing chamber; and,
reacting the cleaning gas containing carbon tetrafluoride gas and chlorine gas with a residual compound containing silicon and oxygen accumulated on walls of the processing chamber, the reaction resulting in the residual gas; and
analyze the residual gas for ion species; and
a process controller configured to:
perform a processing step on a wafer in the processing chamber in the presence of a nitrogen trifluoride precursor gas;
determine a condition of the processing chamber based on the analysis of the residual gas for ion species, wherein the determination of the condition of the processing chamber includes using artificial intelligence or machine learning techniques; and
based on the result of the determining a condition of the processing chamber, introduce the cleaning gas into the processing chamber.
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