US 12,354,846 B2
Plasma processing apparatus
Takahiro Shindo, Tokyo (JP); and Hiroki Arai, Yamanashi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Oct. 19, 2022, as Appl. No. 17/969,603.
Claims priority of application No. 2021-171833 (JP), filed on Oct. 20, 2021.
Prior Publication US 2023/0124217 A1, Apr. 20, 2023
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32577 (2013.01) [H01J 37/32211 (2013.01); H01J 37/3244 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a chamber;
a lower electrode provided in the chamber and included in a substrate support configured to mount a substrate thereon;
an upper electrode provided in the chamber and disposed to face the lower electrode;
a gas supply configured to supply a processing gas between the upper electrode and the lower electrode;
a high-frequency power supply including an output that is electrically connected to the upper electrode, the high-frequency power supply configured to generate a plasma of the processing gas by applying a high-frequency voltage to the upper electrode via the output of the high-frequency power supply; and
a circuit portion including an input that is electrically connected to the output of the high-frequency power supply and an output that is electrically connected to the lower electrode, the circuit portion configured to provide a potential to the lower electrode,
wherein the circuit portion is configured to provide the potential to the lower electrode by causing a current to flow from the high-frequency power supply to the input of the circuit portion rather than to the upper electrode and to supply the lower electrode via the output of the circuit portion when a potential of the high-frequency power supply supplied to the upper electrode is higher than a potential of the lower electrode.