| CPC H01J 37/32477 (2013.01) [H01J 37/32642 (2013.01); H01J 37/32743 (2013.01); H01J 37/32807 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01J 37/32091 (2013.01); H01J 37/3288 (2013.01); H01J 2237/201 (2013.01); H01J 2237/24585 (2013.01); H01J 2237/334 (2013.01)] | 20 Claims |

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1. A method of etching a substrate, the method comprising:
loading the substrate into a plasma etch chamber, the plasma etch chamber comprising a focus ring surrounding the substrate, the focus ring comprising a bulk material and a surface layer, the surface layer comprising a refractory metal;
flowing a process gas comprising fluorine and carbon into the plasma etch chamber;
coating a carbide layer over the surface layer of the focus ring, the coating comprising exposing the focus ring to a plasma generated from the process gas in the plasma etch chamber, the carbide layer comprising a carbide of the refractory metal; and
etching the substrate, the etching comprising exposing the substrate to the plasma.
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