US 12,354,836 B2
System, method, and apparatus for controlling ion energy distribution in plasma processing systems
Victor Brouk, Fort Collins, CO (US); Daniel J. Hoffman, Fort Collins, CO (US); and Daniel Carter, Fort Collins, CO (US)
Assigned to Advanced Energy Industries, Inc., Denver, CO (US)
Filed by Advanced Energy Industries, Inc., Denver, CO (US)
Filed on Mar. 1, 2023, as Appl. No. 18/116,207.
Application 18/116,207 is a continuation of application No. 16/278,822, filed on Feb. 19, 2019, granted, now 11,615,941.
Application 16/278,822 is a continuation in part of application No. 16/194,104, filed on Nov. 16, 2018, granted, now 10,707,055, issued on Jul. 7, 2020.
Application 18/116,207 is a continuation of application No. 15/667,239, filed on Aug. 2, 2017, granted, now 11,011,349, issued on May 18, 2021.
Application 15/667,239 is a continuation in part of application No. 13/596,976, filed on Aug. 28, 2012, granted, now 9,767,988, issued on Sep. 19, 2017.
Application 13/596,976 is a continuation in part of application No. 13/193,299, filed on Jul. 28, 2011, granted, now 9,435,029, issued on Sep. 6, 2016.
Application 13/193,299 is a continuation in part of application No. 12/870,837, filed on Aug. 29, 2010, granted, now 9,287,086, issued on Mar. 15, 2016.
Application 12/870,837 is a continuation in part of application No. 12/767,775, filed on Apr. 26, 2010, granted, now 9,287,092, issued on Mar. 15, 2016.
Claims priority of provisional application 62/588,224, filed on Nov. 17, 2017.
Claims priority of provisional application 61/174,937, filed on May 1, 2009.
Prior Publication US 2024/0071721 A1, Feb. 29, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32009 (2013.01) [H01J 37/32146 (2013.01); H01J 37/32174 (2013.01); H01J 37/32706 (2013.01); H01J 37/32935 (2013.01); H01J 37/3299 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method, comprising:
applying a modified periodic voltage function to an electrode of a substrate support of a process chamber to set a wafer voltage for a wafer, wherein the applying the modified periodic voltage function comprises:
(a) delivering a first plurality of voltage pulses that are delivered during a first period wherein each pulse of the first plurality of voltage pulses comprises a first negative voltage step;
(b) delivering a second plurality of voltage pulses that are delivered during a second period wherein each pulse of the second plurality of voltage pulses comprises a second negative voltage step wherein the first negative voltage step is different than the second negative voltage step; and
repeating (a) and (b) a plurality of times to generate an ion energy distribution function that has a plurality of energy peaks in a plasma formed in the process chamber; and
wherein each pulse comprises a portion between the negative voltage step and a positive voltage step of a next pulse.