US 12,354,701 B2
Sense amplifier circuit and method
Jui-Jen Wu, Hsinchu (TW); Win-San Khwa, Hsinchu (TW); Jen-Chieh Liu, Hsinchu (TW); and Meng-Fan Chang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Mar. 25, 2024, as Appl. No. 18/615,497.
Application 18/615,497 is a continuation of application No. 17/675,901, filed on Feb. 18, 2022, granted, now 11,942,178.
Prior Publication US 2024/0233782 A1, Jul. 11, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 16/04 (2006.01); G11C 7/06 (2006.01); G11C 7/08 (2006.01)
CPC G11C 7/065 (2013.01) [G11C 7/08 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A circuit comprising:
first and second data lines;
a sense amplifier comprising first and second input terminals;
a first p-type metal-oxide-semiconductor (PMOS) transistor coupled in series with a first capacitive device between the first data line and the second input terminal;
a second PMOS transistor coupled in series with a second capacitive device between the second data line and the first input terminal;
a third PMOS transistor coupled between the first data line and the first input terminal;
a fourth PMOS transistor coupled between the second data line and the second input terminal;
a first n-type metal-oxide-semiconductor (NMOS) transistor configured to selectively couple each of the first PMOS transistor and the first capacitive device to a ground node; and
a second NMOS transistor configured to selectively couple each of the second PMOS transistor and the second capacitive device to the ground node.