US 12,354,530 B2
Display device including light-emitting diode backlight unit
Byungil Kim, Hwaseong-si (KR); Yangwook Kim, Seoul (KR); Pansoo Kim, Yongin-si (KR); Hyeongtae Kim, Seoul (KR); Sukyun Woo, Hwaseong-si (KR); Jisu Yoon, Hwaseong-si (KR); and Hyunji Yoon, Daegu (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-Do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 8, 2023, as Appl. No. 18/463,914.
Application 18/463,914 is a continuation of application No. 17/537,950, filed on Nov. 30, 2021, granted, now 11,790,834.
Claims priority of application No. 10-2020-0170756 (KR), filed on Dec. 8, 2020; and application No. 10-2021-0055034 (KR), filed on Apr. 28, 2021.
Prior Publication US 2023/0419887 A1, Dec. 28, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G09G 3/32 (2016.01); G09G 3/34 (2006.01)
CPC G09G 3/32 (2013.01) [G09G 3/3426 (2013.01); G09G 2300/0814 (2013.01); G09G 2300/0842 (2013.01); G09G 2310/08 (2013.01); G09G 2320/0233 (2013.01); G09G 2320/0257 (2013.01); G09G 2320/0633 (2013.01); G09G 2320/064 (2013.01); G09G 2320/066 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An integrated circuit comprising:
a first pin configured to receive an image signal;
a second pin configured to receive a scan signal;
a driver transistor configured to generate an output current according to a voltage of a gate node based on the scan signal and the image signal; and
an overvoltage detection circuit configured to generate a detection signal in response to a voltage of an output pin exceeding a reference voltage, and
the overvoltage detection circuit including an off transistor configured to block the output current by discharging the gate node based on the detection signal.