US 12,353,769 B2
Memory device and operation method thereof
Sooyong Lee, Suwon-si (KR); and Jae Hyun Choi, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Dec. 11, 2023, as Appl. No. 18/535,027.
Claims priority of application No. 10-2023-0061274 (KR), filed on May 11, 2023.
Prior Publication US 2024/0377988 A1, Nov. 14, 2024
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0659 (2013.01) [G06F 3/0619 (2013.01); G06F 3/0673 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device comprising:
a memory cell array including first to fourth memory cells respectively connected to first to fourth word lines;
a sense amplifier including a first sensing circuit configured to generate a first weighted sum, based on a first weight stored in the first memory cell and a second weight stored in the third memory cell, in response to an activation of the first and third word lines at a first time point;
an input and output circuit configured to output the first weighted sum to an external device in response to a first read command; and
a restore circuit configured to perform a restore operation for storing a first data item stored in the second memory cell to the first memory cell and for storing a second data item stored in the fourth memory cell to the third memory cell after the first time point.