US 12,353,326 B1
Control method for reading operation of memory device
Shih-Chou Juan, Taoyuan (TW); Shun-Li Cheng, Zhubei (TW); and Hung-Yi Chiang, Hsinchu County (TW)
Assigned to MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed by MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed on Apr. 19, 2024, as Appl. No. 18/640,310.
Int. Cl. G06F 12/02 (2006.01); G06F 13/16 (2006.01); G06F 13/42 (2006.01); G11C 16/32 (2006.01)
CPC G06F 12/0246 (2013.01) [G06F 13/1689 (2013.01); G06F 13/4239 (2013.01); G11C 16/32 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A control method, for controlling a reading operation of a memory device, the control method comprising:
providing a toggle signal to the memory device, the toggle signal has a toggle frequency;
performing a reading operation of a page of the memory device according to the toggle signal, wherein the page includes a plurality of chunks;
setting the toggle frequency as a target toggle frequency, and performing a reading operation of a first chunk of the page according to the target toggle frequency, so as to receive a data signal from the memory device; and after the reading operation of the first chunk is completed, selectively adjusting the toggle frequency to perform a reading operation of a second chunk after the first chunk according to a stable state of the data signal and a data strobe signal.