US 12,353,068 B2
Method for on-silicon integration of a component III-V and on-silicon integrated component III-V
Delphine Neel, Palaiseau (FR); and David Bitauld, Palaiseau (FR)
Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR); and THALES, Courbevoie (FR)
Filed by COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR); and THALES, Courbevoie (FR)
Filed on Nov. 9, 2022, as Appl. No. 18/053,959.
Claims priority of application No. 21 11895 (FR), filed on Nov. 9, 2021.
Prior Publication US 2023/0145652 A1, May 11, 2023
Int. Cl. G02F 1/017 (2006.01); C23C 16/02 (2006.01); C23C 16/18 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); C30B 31/22 (2006.01); C30B 33/10 (2006.01); H10F 71/00 (2025.01)
CPC G02F 1/01708 (2013.01) [C23C 16/0227 (2013.01); C23C 16/18 (2013.01); C30B 25/18 (2013.01); C30B 29/40 (2013.01); C30B 31/22 (2013.01); C30B 33/10 (2013.01); H10F 71/127 (2025.01); H10F 71/128 (2025.01); H10F 71/139 (2025.01); G02F 2202/06 (2013.01); G02F 2202/101 (2013.01); G02F 2202/102 (2013.01); G02F 2202/108 (2013.01); G02F 2203/50 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method for on-silicon integration of a III-V-based material component comprising:
providing a first substrate comprising a silicon-based optical layer, said optical layer comprising at least one waveguide,
transferring a second III-V-based material substrate on the optical layer,
forming the component from the second substrate, in a proximity of the waveguide so as to enable a coupling between the waveguide and the component, by preserving a III-V-based material layer extending laterally from the component,
forming by epitaxy from the III-V-based material layer an InP:Fe-based structure laterally bordering the component,
forming a layer comprising contacts configured to electrically contact the component, on a face of the component opposite the optical layer, and
transferring a third silicon-based substrate on the layer comprising the contacts.