US 12,353,011 B2
Photonic package and method of manufacture
Tsung-Fu Tsai, Changhua (TW); Hsing-Kuo Hsia, Jhubei (TW); Szu-Wei Lu, Hsinchu (TW); and Chen-Hua Yu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 27, 2022, as Appl. No. 17/809,122.
Prior Publication US 2023/0417993 A1, Dec. 28, 2023
Int. Cl. G02B 6/136 (2006.01); G02B 6/12 (2006.01); G02B 6/124 (2006.01)
CPC G02B 6/136 (2013.01) [G02B 6/124 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12121 (2013.01); G02B 2006/12123 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a first set of waveguides on a first side of a first dielectric layer, wherein the first set of waveguides comprises a photonic device;
forming a redistribution structure over the first set of waveguides, wherein the redistribution structure is electrically connected to the photonic device;
forming a second set of waveguides on a second side of the first dielectric layer, wherein the first set of waveguides and the second set of waveguides comprise different materials;
forming a second dielectric layer over the second set of waveguides;
bonding a laser substrate die to the second dielectric layer using a dielectric-to-dielectric bonding process; and
after the bonding the laser substrate die to the second dielectric layer, processing the laser substrate die to form a laser diode, wherein the laser diode is optically coupled to a waveguide of the second set of waveguides, wherein the processing the laser substrate die comprises at least one photolithographic masking and etching process.