| CPC G02B 6/12002 (2013.01) [G02B 6/12 (2013.01); G02B 6/12004 (2013.01); G02B 6/12016 (2013.01); G02B 6/122 (2013.01); G02B 6/1228 (2013.01); G02B 6/125 (2013.01); G02B 6/136 (2013.01); G02B 6/12011 (2013.01); G02B 2006/12038 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12147 (2013.01); G02B 2006/12159 (2013.01); G02B 2006/12164 (2013.01); G02B 2006/12176 (2013.01)] | 13 Claims |
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1. A photonic component comprising:
a photonic module, comprising:
a substrate defining a horizontal plane and comprising a silicon layer and a buried oxide (BOX) layer directly on the silicon layer;
a first waveguide above the substrate;
a second waveguide, disposed above the first waveguide on an opposing side of the first waveguide to the substrate;
a third waveguide above the substrate, the second waveguide being disposed above the third waveguide on an opposing side of the third waveguide to the substrate, the second waveguide being optically coupled between the first and third waveguides;
a first coupling section configured to couple light between the first waveguide and the second waveguide and comprising:
a tapered portion of the first waveguide, tapering from a first width to a second width along a first direction, and
a first tapered portion of the second waveguide, tapering from a first width to a second width along a second direction antiparallel to the first direction; and
a second coupling section configured to couple light between the second waveguide and the third waveguide and comprising:
a second tapered portion of the second waveguide, tapering from a first width to a second width along a third direction, and
a tapered portion of the third waveguide, tapering from a first width to a second width along a fourth direction antiparallel to the third direction; and
one or more crossing waveguides, a portion of the or each crossing waveguide being located between the second waveguide and the substrate,
wherein the or each crossing waveguide is optically insulated from the waveguides of the photonic module,
wherein:
the first waveguide and the third waveguide are each formed of crystalline silicon and the second waveguide is formed of amorphous silicon; or
the first waveguide and the third waveguide are each formed of amorphous silicon and the second waveguide is formed of crystalline silicon,
wherein the first and third waveguides are directly on the BOX layer, and the second waveguide is directly on the first and third waveguides, and
wherein the portion of a first crossing waveguide of the one or more crossing waveguides that extends between the second waveguide and the substrate extends along a direction that forms a non-zero and non-perpendicular angle relative to a longitudinal axis of the second waveguide.
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