US 12,352,922 B2
On-chip phase modulating thin film optical elements
Haeri Park Hanania, Sierra Madre, CA (US); Radwanul Hasan Siddique, Monrovia, CA (US); and Yibing Michelle Wang, Temple City, CA (US)
Assigned to SAMSUNG ELECTRONICS CO., LTD., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Mar. 18, 2022, as Appl. No. 17/699,071.
Claims priority of provisional application 63/299,913, filed on Jan. 14, 2022.
Prior Publication US 2023/0228909 A1, Jul. 20, 2023
Int. Cl. G02B 1/00 (2006.01); G02B 1/02 (2006.01); G02F 1/29 (2006.01)
CPC G02B 1/002 (2013.01) [G02B 1/02 (2013.01); G02F 1/29 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A metalens, comprising:
a first thin-film layer comprising a first index of refraction; and
a first embedded layer within the first thin-film layer and comprising a second index of refraction, a ratio of the second index of refraction to the first index of refraction being greater than or equal to 1.5 and less than or equal to 3.0; and
wherein the first embedded layer fills a plurality of holes in the first thin-film layer, and wherein the plurality of holes have a lattice spacing of substantially half a predetermined target wavelength between each other.