	US 12,352,708 B2
	Detection method for the radiation-induced defects of oxide layer in electronic devices
Xingji Li, Harbin (CN); Jianqun Yang, Harbin (CN); Xiaodong Xu, Harbin (CN); Gang Lv, Harbin (CN); Xiuhai Cui, Harbin (CN); Tao Ying, Harbin (CN); and Yadong Wei, Harbin (CN)
Assigned to Harbin Institute of Technology, Harbin (CN)
Appl. No. 17/626,819
Filed by Harbin Institute of Technology, Harbin (CN)
PCT Filed Jul. 27, 2021, PCT No. PCT/CN2021/108674 § 371(c)(1), (2) Date Jan. 13, 2022, PCT Pub. No. WO2022/022509, PCT Pub. Date Feb. 3, 2022.
Claims priority of application No. 202010735200.7 (CN), filed on Jul. 28, 2020.
Prior Publication US 2022/0349843 A1, Nov. 3, 2022
Int. Cl. G01N 23/18 (2018.01)

CPC G01N 23/18 (2013.01)

10 Claims

1. A detection method for radiation-induced defects of an oxide layer in electronic devices, comprising the following steps:

step S100: selecting a semiconductor material to be prepared into a substrate, wherein a resistivity of the substrate is 0.00001 to 10 Ω·cm, or a doping concentration of the substrate is greater than 1e18 cm⁻³;

step S200: preparing a back electrode on an upper surface of the substrate;

step S300: growing an oxide layer on the back electrode;

step S400: etching one side of the oxide layer, and exposing an etched part out of the back electrode;

step S500: preparing a front electrode on an upper surface of the oxide layer;

step S600: forming a plurality of grooves in the front electrode, and distributing the plurality of grooves in a grid shape to prepare a test sample; and

step S700: performing a radiation test on the test sample, applying an electric field to the back electrode and the front electrode, detecting a leakage current of the test sample before and after radiation, determining whether electron traps/hole traps exist in the oxide layer, and extracting a trapped electron concentration/trapped hole concentration in the oxide layer.