US 12,351,942 B2
Oxygen-doped group III metal nitride and method of manufacture
Wenkan Jiang, Walnut, CA (US); Dirk Ehrentraut, Camas, WA (US); and Mark P. D'Evelyn, Vancouver, WA (US)
Assigned to SLT Technologies, Inc., Los Angeles, CA (US)
Filed by SLT Technologies, Inc., Los Angeles, CA (US)
Filed on Dec. 16, 2023, as Appl. No. 18/542,594.
Application 18/542,594 is a division of application No. 16/868,528, filed on May 6, 2020, granted, now 11,898,269.
Application 16/868,528 is a continuation of application No. 15/865,391, filed on Jan. 9, 2018, granted, now 10,648,102.
Claims priority of provisional application 62/444,171, filed on Jan. 9, 2017.
Prior Publication US 2024/0133076 A1, Apr. 25, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. C30B 29/40 (2006.01); C01B 21/06 (2006.01); C30B 7/10 (2006.01); H10D 62/50 (2025.01); H10D 62/85 (2025.01)
CPC C30B 29/406 (2013.01) [C01B 21/0632 (2013.01); C30B 7/105 (2013.01); H10D 62/50 (2025.01); H10D 62/8503 (2025.01); C01P 2002/30 (2013.01); C01P 2002/74 (2013.01); C01P 2002/80 (2013.01); C01P 2006/80 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a gallium-containing nitride crystal substrate comprising gallium and nitrogen and having a wurtzite structure and comprising a first surface and a second surface opposite the first surface;
at least one n-type epitaxial layer, at least one AlInGaN epitaxial layer, and at least one p-type epitaxial layer overlying at least a portion of the first surface;
a p-contact disposed over at least a portion of the p-type epitaxial layer; and
an n-contact,
wherein the gallium-containing nitride crystal substrate comprises point defects having defect types and relative concentrations resulting in a compensation ratio between about 1.0 and about 4.0, said point defects being characterized by an absorbance per unit thickness of at least 0.01 cm−1 at wavenumbers of approximately 3175 cm−1, 3164 cm−1, and 3150 cm−1 and
at wavenumbers between about 3200 cm−1 and about 3400 cm−1 and between about 3075 cm−1 and about 3125 cm−1, said gallium-containing nitride crystal substrate being essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm−1.