US 12,351,909 B2
Gap fill methods using catalyzed deposition
Byunghoon Yoon, Sunnyvale, CA (US); Liqi Wu, San Jose, CA (US); Joung Joo Lee, San Jose, CA (US); Kai Wu, Palo Alto, CA (US); Xi Cen, San Jose, CA (US); Wei Lei, Campbell, CA (US); Sang Ho Yu, Cupertino, CA (US); and Seshadri Ganguli, Sunnyvale, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Mar. 11, 2021, as Appl. No. 17/198,576.
Claims priority of provisional application 62/988,091, filed on Mar. 11, 2020.
Prior Publication US 2021/0285102 A1, Sep. 16, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/455 (2006.01); C23C 16/02 (2006.01); C23C 28/02 (2006.01); H01L 21/02 (2006.01)
CPC C23C 16/45534 (2013.01) [C23C 16/0227 (2013.01); C23C 16/45553 (2013.01); C23C 28/02 (2013.01); H01L 21/0228 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A method of forming a seam-free gap fill, the method comprising:
depositing a second metal film in a feature on a substrate to partially fill the feature with the second metal film, the feature comprising a bottom and at least one dielectric sidewall, the bottom comprising a first metal, the first metal comprising a first metal material, the first metal having a first metal surface that is exposed within the feature, the at least one dielectric sidewall having a top surface outside of the feature and one or more dielectric sidewall surfaces within the feature, the second metal film comprising a second metal material, the second metal film forming directly and selectively on the first metal surface relative to the one or more dielectric sidewall surfaces within the feature and the second metal film having a top surface below the top surface of the at least one dielectric sidewall;
depositing a liner on the one or more dielectric sidewall surfaces within the feature above the second metal film;
filling the feature with the second metal material to cover the liner and the top surface of the at least one dielectric sidewall; and
removing the second metal film and at least some of the liner from the top surface of the at least one dielectric sidewall and at least some of the dielectric to form a seam-free gap fill.