US 12,351,908 B2
Substrate processing method, recording medium, and substrate processing apparatus
Takeo Hanashima, Toyama (JP); and Kazuhiro Harada, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Nov. 26, 2021, as Appl. No. 17/535,793.
Claims priority of application No. 2020-196816 (JP), filed on Nov. 27, 2020.
Prior Publication US 2022/0170154 A1, Jun. 2, 2022
Int. Cl. C23C 16/455 (2006.01); C23C 16/34 (2006.01); C23C 16/52 (2006.01); H01L 21/02 (2006.01)
CPC C23C 16/45525 (2013.01) [C23C 16/345 (2013.01); C23C 16/52 (2013.01); H01L 21/02211 (2013.01); H01L 21/0228 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A substrate processing method, comprising:
forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including:
(a) supplying a precursor gas from a precursor gas supply line into a process chamber in which the substrate is accommodated;
(b) supplying a reaction gas into the process chamber; and
(c) supplying an inert gas into the process chamber between (a) and (b),
wherein in (a), the precursor gas is divisionally supplied to the substrate a first plural number of times,
wherein in (a), the precursor gas is pre-filled in a storage installed in the precursor gas supply line and then supplied into the process chamber when the precursor gas is supplied for the first time,
wherein (a) further comprises exhausting an inside of the process chamber before supplying the precursor gas for the second time,
wherein in (a), the exhausting is performed without supplying the inert gas or with supplying a smaller amount of the inert gas than an amount of the inert gas supplied in (c) into the process chamber, and
wherein in (a), a supply time of the precursor gas when the precursor gas is supplied for the first time is set to be shorter than a supply time of the precursor gas when the precursor gas is supplied for the second time.