US 12,351,905 B2
Film forming method and film forming apparatus
Ryota Ifuku, Nirasaki (JP); Makoto Wada, Nirasaki (JP); Nobutake Kabuki, Nirasaki (JP); Takashi Matsumoto, Nirasaki (JP); Hiroshi Terada, Nirasaki (JP); and Genji Nakamura, Nirasaki (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Sep. 27, 2022, as Appl. No. 17/935,594.
Claims priority of application No. 2021-159147 (JP), filed on Sep. 29, 2021; and application No. 2022-015348 (JP), filed on Feb. 3, 2022.
Prior Publication US 2023/0102051 A1, Mar. 30, 2023
Int. Cl. C23C 2/06 (2006.01); C23C 16/02 (2006.01); C23C 16/26 (2006.01); C23C 16/44 (2006.01); C23C 16/513 (2006.01)
CPC C23C 16/26 (2013.01) [C23C 16/0209 (2013.01); C23C 16/0227 (2013.01); C23C 16/0272 (2013.01); C23C 16/4408 (2013.01); C23C 16/513 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A film forming method comprising:
a loading process of loading a substrate into a processing container;
a first process of forming an interface layer having an amorphous structure on the substrate by plasma of a first mixed gas including a carbon-containing gas; and
a second process of forming a graphene film on the interface layer by plasma of a second mixed gas including the carbon-containing gas.