US 12,351,904 B2
Film deposition method and method for forming polycrystalline silicon film
Yoshihiro Takezawa, Yamanashi (JP); Tatsuya Miyahara, Yamanashi (JP); and Daisuke Suzuki, Yamanashi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Nov. 1, 2022, as Appl. No. 18/051,566.
Claims priority of application No. 2021-184977 (JP), filed on Nov. 12, 2021.
Prior Publication US 2023/0151480 A1, May 18, 2023
Int. Cl. C23C 16/24 (2006.01); C30B 25/10 (2006.01); C30B 25/20 (2006.01); C30B 29/06 (2006.01)
CPC C23C 16/24 (2013.01) [C30B 25/10 (2013.01); C30B 25/20 (2013.01); C30B 29/06 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A film deposition method comprising:
depositing an amorphous silicon film in a substrate under a process condition, the process condition including
supplying SiH4 gas into a processing chamber in which the substrate is placed,
setting a temperature in the processing chamber to be in a range of greater than or equal to 300° C. and less than or equal to 440° C., and
setting a pressure in the processing chamber to be in a range of greater than or equal to 10 Torr and less than or equal to 100 Torr, the amorphous silicon film including a seed layer that is derived from the SiH4 gas, and the seed layer being deposited under the process condition;
depositing a bulk layer on the seed layer; and
desorbing hydrogen from the seed layer derived from the SiH4 gas to crystallize the seed layer and the bulk layer,
wherein the depositing of the amorphous silicon film includes nucleating silicon in the seed layer within the ranges of the temperature and the pressure in the processing chamber,
wherein the crystallizing of the seed layer and the bulk layer includes crystallizing the bulk layer from the nucleated silicon,
wherein the substrate includes a top surface and a recess extending from the top surface in a depth direction,
wherein the depositing of the amorphous silicon film includes depositing the seed layer on which the bulk layer is to be deposited, on the top surface and an inner surface of the recess in the substrate, and
wherein the process condition is adjusted such that a thickness ratio of the seed layer at a bottom surface of the recess to the seed layer at the top surface of the substrate is 97.7%.