US 12,351,900 B2
Plasma based film modification for semiconductor devices
Timothy J. Miller, Ipswich, MA (US); and Vikram M. Bhosle, North Reading, MA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Apr. 24, 2023, as Appl. No. 18/306,111.
Prior Publication US 2024/0352575 A1, Oct. 24, 2024
Int. Cl. C23C 14/34 (2006.01); C23C 14/06 (2006.01); H01J 37/34 (2006.01); H01L 21/265 (2006.01)
CPC C23C 14/3492 (2013.01) [C23C 14/0682 (2013.01); C23C 14/0694 (2013.01); C23C 14/345 (2013.01); H01J 37/347 (2013.01); H01L 21/26506 (2013.01); H01J 2237/2001 (2013.01); H01J 2237/332 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method for treating a dielectric film of a semiconductor device, the method comprising:
forming the dielectric film over a substrate base;
depositing a second film over the dielectric film to a desired thickness, wherein the dielectric film and the second film are different materials;
after the second film is formed to the desired thickness, begin introducing an inert species into the second film while the second film continues being deposited over the dielectric film, wherein the inert species is further introduced into the dielectric film, through the second film, to increase an etch-resistance of an upper portion of the dielectric film at an interface between the dielectric film and the second film; and
removing the second film by stopping deposition of the second film while continuing to introduce the inert species into the second film.
 
8. A method for modifying an etch resistance of a dielectric film of a semiconductor device, the method comprising:
forming the dielectric film over a substrate base;
depositing a second film directly atop the dielectric film to a desired thickness, wherein the dielectric film and the second film are different materials;
after the second film is formed to the desired thickness, begin introducing an inert species into the second film while the second film continues being deposited over the dielectric film, wherein the inert species is further introduced into the dielectric film, through the second film, to increase an etch-resistance of an upper portion of the dielectric film at an interface between the dielectric film and the second film; and
removing the second film by stopping deposition of the second film while continuing to introduce the inert species into the second film.