| CPC C09G 1/02 (2013.01) [C09K 3/1463 (2013.01); H01L 21/3212 (2013.01)] | 12 Claims |

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1. A method for the manufacture of semiconductor devices comprising the chemical-mechanical polishing of a substrate in the presence of a chemical-mechanical polishing (CMP) composition comprising
(A) at least one inorganic abrasive particle;
(B) at least one chelating agent selected from carboxylic acids;
(C) at least one corrosion inhibitor selected from unsubstituted or substituted triazoles;
(D) at least one non-ionic surfactant comprising at least one polyoxyalkylene group;
(E) at least one pad-cleaning agent selected from polymers and co-polymers of acrylic acid, methacrylic acid and maleic acid; wherein the polymers and co-polymers of acrylic acid, methacrylic acid, and maleic acid have a number average molecular weight in the range of ≥500 g/mol to ≤3000 g/mol and wherein the at least one pad-cleaning agent is selected from poly (acrylic acid-co-maleic acid) copolymers;
(F) at least one carbonate or hydrogen carbonate;
(G) at least one oxidizing agent selected from the group consisting of organic peroxides, inorganic peroxides, persulfates, iodates, periodic acids, periodates, permanganates, perchloric acids, perchlorates, bromic acids and bromates; and
(H) an aqueous medium.
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