US 12,351,510 B2
Graphene doping by thermal poling
Miriam Marchena Martin-Francés, Barcelona (ES); Prantik Mazumder, Ithaca, NY (US); and Valerio Pruneri, Castelldefels (ES)
Assigned to CORNING INCORPORATED, Corning, NY (US); and THE INSTITUTE OF PHOTONIC SCIENCES, Barcelona (ES)
Appl. No. 17/285,322
Filed by CORNING INCORPORATED, Corning, NY (US); and THE INSTITUTE OF PHOTONIC SCIENCES, Barcelona (ES)
PCT Filed Oct. 9, 2019, PCT No. PCT/US2019/055288
§ 371(c)(1), (2) Date Apr. 14, 2021,
PCT Pub. No. WO2020/081306, PCT Pub. Date Apr. 23, 2020.
Claims priority of provisional application 62/747,219, filed on Oct. 18, 2018.
Prior Publication US 2021/0347689 A1, Nov. 11, 2021
Int. Cl. C03C 23/00 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); C01B 32/194 (2017.01)
CPC C03C 23/009 (2013.01) [C01B 32/194 (2017.08); C03C 23/007 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a graphene device, comprising:
providing a glass substrate with at least one blocking layer disposed thereon to form a stack, wherein the glass substrate comprises metal ions;
providing a first electrode disposed to partially cover the blocking layer;
transferring a graphene layer on the first electrode;
providing a second electrode disposed to partially cover the blocking layer without overlapping with the first electrode and the graphene layer;
increasing the temperature of the stack to at least 100° C.;
applying an external electric potential (VP2) to the first electrode such that said metal ions of the glass substrate migrate toward the first electrode to create a depletion region in the glass substrate adjacent the second electrode at a potential (VP1);
decreasing the temperature of the stack to room temperature while applying the external electric potential; and
after reaching room temperature, setting the external electric potential to zero to create a frozen voltage region in the glass substrate adjacent the second electrode.